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Número de pieza | STU600S | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | SamHop Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STU600S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SamHop Microelectronics Corp.
STU/D600SGreen
Product
Aug 25,2006
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) ( m W ) Max
60V 16A
55 @ VGS = 10V
70 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
STU SERIES
TO-252AA(D-PAK)
GDS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @a Ta
-Pulsed b
Symbol
VDS
VGS
25 C
ID
70 C
IDM
Limit
60
20
16
10.7
30
Drain-Source Diode Forward Current a
IS
15
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Ta= 25 C
Ta=70 C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PD
TJ, TSTG
R JC
R JA
50
35
-55 to 175
3
50
Unit
V
V
A
A
A
A
W
C
C /W
C /W
1 page S T U/D600S
1200
1000
800 C is s
600
400
6 C oss
200
C rss
0
05
10 15
20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
10
VDS =30V
8 ID=8A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
220 60
100 TD(off)
60 Tr
10 R DS(ON) Limit
100ms10ms
T D(on)
Tf
DC 1s
10 1
V DS =30V ,ID=8A
1 V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (W)
F igure 11.s witching characteris tics
2
1
D =0 . 5
0.1
0.03
0.1
VGS =10V
S ingle P ulse
T A=25 C
1
10 60 80
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
0.2
0.1
0.1 0.05
0.02
0.01
0.01
10-5
S INGLE PULS E
10-4
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
P DM
t1
t2
1. R J A (t)=r (t) * R J A
2. R J A=S ee Datas heet
3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
1
10
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet STU600S.PDF ] |
Número de pieza | Descripción | Fabricantes |
STU600S | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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