STD428S PDF даташит
Спецификация STD428S изготовлена «SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | STD428S |
Описание | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Производители | SamHop Microelectronics |
логотип |
9 Pages
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S T U/D428S
S amHop Microelectronics C orp.
Mar.8,2007
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ωı ) T yp
40V 50A
8 @ VGS = 10V
10 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
40
20
Unit
V
V
Drain Current-Continuous @TC=25 C
-Pulsed a
ID
IDM
50
100
A
A
Drain-Source Diode Forward Current IS 20 A
Maximum Power Dissipation @Tc=25 C
PD
50
W
Operating and Storage Temperature Range TJ, TSTG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R JC
R JA
3
50
C /W
C /W
1
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S T U/D428S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
BVDSS VGS= 0V, ID= 250uA
40
V
Zero Gate Voltage Drain Current
IDSS VDS= 32V, VGS=0V
1 uA
Gate-Body Leakage
ON CHARACTERISTICS a
IGSS VGS = 20V, VDS= 0V
10 uA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 1 1.7 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =10A
VGS =4.5V, ID= 6A
8 10 m ohm
10 13 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VDS = 10V, VGS = 10V
VDS = 10V, ID = 10A
30
26
A
S
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
VDS =20V, VGS = 0V
COSS f =1.0MHZ
CRSS
1505 PF
220 PF
150 PF
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON) VDD = 15V
tr ID = 1 A
tD(O F F )
VGS = 10V
R GEN = 6 ohm
Fall Time
tf
0.3
23
19
85
27
ohm
ns
ns
ns
ns
Total Gate Charge
Qg VDS =15V, ID =10A,VGS =10V
28
nC
Gate-S ource Charge
Gate-Drain Charge
VDS =15V, ID =10A,VGS =4.5V
Qgs VDS =15V, ID = 10A
Qgd VGS =10V
2
12.5
3
6
nC
nC
nC
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S T U/D428S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is = 10A
Min Typ Max Unit
0.95 1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
60
V GS =4V
50
VGS=4.5 V
40
VG S =10V
30
20 V GS =3V
10
V GS =2.5V
0
0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
T j =125 C
15
-55 C
10
25 C
5
0
0 0.8 1.6 2.4 3.2 4.0 4.8
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
15
12
V GS =4.5V
9
V GS =10V
6
3
1
1 12 24 36 48 60
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
2.0
1.8
1.6
V G S =10V
1.4 ID=10A
1.2 V G S =4.5V
ID=6A
1.0
0
0 25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
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Номер в каталоге | Описание | Производители |
STD428S | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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