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STU466S PDF даташит

Спецификация STU466S изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STU466S
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STU466S Даташит, Описание, Даташиты
STU/D466SGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
11 @ VGS=10V
40V 38A
15 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
IDM -Pulsed a
TC=25°C
TC=70°C
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
40
±20
38
30
111
42
27
-55 to 150
3
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Feb,06,2013
www.samhop.com.tw









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STU466S Даташит, Описание, Даташиты
STU/D466S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
40
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=19A
VGS=4.5V , ID=17A
VDS=5V , ID=19A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=20V,ID=19A,VGS=10V
VDS=20V,ID=19A,VGS=4.5V
VDS=20V,ID=19A,
VGS=10V
1
Typ
1.7
9.5
11
55
2245
321
147
35
23
72
42
29
13
3.3
5.7
Max Units
1
±100
V
uA
nA
3V
11 m ohm
15 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=7A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
0.8 1.3
V
Feb,06,2013
2 www.samhop.com.tw









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STU466S Даташит, Описание, Даташиты
STU/D466S
100
V GS =10V
80
60
V GS =4.5V
V GS =4V
V GS =3.5V
40
V GS =3V
20
0
0 0.5 1 2.5 2 1.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
20
16
VGS=4.5V
12
VGS=10V
8
4
0
1 20 40 60 80 100
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
15
12
Tj=125 C
9
6
25 C -55 C
3
0
0 0.6 1.2 1.8 2.4 3.0 3.6
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8
1.6 V G S =10V
ID=19A
1.4
1.2
V G S =4.5V
1.0 ID=17A
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4 V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.20
ID=250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Feb,06,2013
3 www.samhop.com.tw










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