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STD410S PDF даташит

Спецификация STD410S изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STD410S
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STD410S Даташит, Описание, Даташиты
S T U/D410S
S amHop Microelectronics C orp.
Mar. 26 2007
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
40V
ID R DS (ON) ( m W ) Max
20 @ VGS = 10V
30A
30 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TC=25 C
-P ulsed b
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Operating and S torage Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
40
20
30
100
8
50
-55 to 175
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
3
50
C /W
C /W
1
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STD410S Даташит, Описание, Даташиты
S T U/D410S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
BVDSS VGS =0V, ID =250uA
IDSS VDS =32V, VGS =0V
IGSS VGS = 20V, VDS= 0V
40
V
1 uA
10 uA
V G S (th)
R DS(ON)
VDS =VGS, ID = 250uA
VGS =10V, ID =10A
VGS =4.5V, ID= 8A
1 1.9 3 V
16 20 m ohm
23 30 m ohm
On-S tate Drain Current
ID(ON) VDS = 10V, VGS = 10V
Forward Transconductance
DYNAMIC CHARACTERISTICS b
gFS
VDS = 10V, ID = 10A
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
SWITCHING CHARACTERISTICS b
C IS S
COSS
CRSS
VDS =15V, VGS = 0V
f =1.0MHZ
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 15V
tr ID = 1 A
tD(O F F )
VGS = 10V
R GEN = 3 ohm
tf
30
17
690
140
95
13.1
13.5
45.7
11.8
A
S
PF
PF
PF
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg VDS =20V, ID =10A,VGS =10V
VDS =20V, ID =10A,VGS =4.5V
Qgs VDS =20V, ID = 10A
Qgd VGS =10V
13.5
6.7
1.65
3.85
nC
nC
nC
nC
2
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STD410S Даташит, Описание, Даташиты
S T U/D410S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is = 8A
Min Typ Max Unit
0.84 1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
45
V GS =10V
36
27
V GS =4.5V
V GS =4V
20
16
12
18 V GS =3.5V
9
V GS =3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
8 T j= 125 C
25 C
4
-55 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
42
35
28 V GS =4.5V
21
14 V GS =10V
7
0
19
18 27 36 45
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
1.75
1.60
1.45
V G S =10V
ID=10A
1.30
1.15
1.0 V G S =4.5V
ID=8A
0.8
-25
0 25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
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