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PDF STS8212 Data sheet ( Hoja de datos )
| Número de pieza | STS8212 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STS8212 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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STS8212Gre
Pro
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
20V
ID RDS(ON) (mΩ) Max
14.5 @ VGS=4.5V
15 @ VGS=4.0V
8A 15.5 @ VGS=3.7V
18 @ VGS=3.1V
22 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S1
D1/D2
S2
TSOT 26
Top View
16
25
34
G1
D1/D2
G2
D1
G1 G2
S1
D2
S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
20
±12
8
6.4
50
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Mar,09,2012
www.samhop.com.tw
1 page  
STS8212
Ver 1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
ID = 4A
50
40 VGS = 2.5 V
3.1 V
3.7 V
30 4.0 V
20
10
0
-50 0 50 100 150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
100
Ciss
Coss
Crss
10
0.1
1 10 100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
VDD = 16.0 V
VGS = 4.5 V
RG = 6 Ω
100
td(off)
tr
tf
td(on)
10
1
0.1 1 10
ID - Drain Current - A
4
3 VDD = 4.0 V
10 V
16 V
2
1
ID = 8 A
0
02
4 6 8 10 12
QG - Gate Charge -nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
Mar,09,2012
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS8212.PDF ] | |
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