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PDF STS3426 Data sheet ( Hoja de datos )
| Número de pieza | STS3426 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STS3426
Ver 1.1
PRODUCT SUMMARY
VDSS
30V
ID
4.2A
RDS(ON) (mΩ) Max
31 @ VGS= 10V
40 @ VGS= 4.5V
52 @ VGS= 2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
SOT 26
Top View
D 16 D
D 25 D
G 34 S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
30
±12
4.2
3.4
17
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,17,2013
www.samhop.com.tw
1 page  
STS3426
Ver 1.1
10
1
0.5
0.2
0.1
0. 1 0.05
0.02
0.01
0.01
0.0000 1
0.000 1
Single Pulse
0 .001
0.01
0. 1
1
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
Square Wave Pulse Duration(sec)
Figure 13. Normalized Thermal Transient Impedance Curve
1 00 0
Dec,17,2013
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS3426.PDF ] | |
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