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PDF STP35N10 Data sheet ( Hoja de datos )
| Número de pieza | STP35N10 | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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STP35N10Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
100V 35A 30 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 package.
D
G
D
S
S TP S E R IE S
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
100
±20
35
29.3
IDM -Pulsed a
103
TC=25°C
PD
Maximum Power Dissipation
TC=70°C
75
52.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2
62.5
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Apr,22,2014
www.samhop.com.tw
1 page  
STP35N10
Ver 1.1
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
Figure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
2
1
D=0.5
0.2
0.1
0.1 0.05
0.02
0.01
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
0.1 1
Square Wave Pulse Duration (msec)
Figure 14. Normalized Thermal Transient Impedance Curve
10
Apr,22,2014
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STP35N10.PDF ] | |
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