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STB70L60 PDF даташит

Спецификация STB70L60 изготовлена ​​​​«SamHop» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STB70L60
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop
логотип SamHop логотип 

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STB70L60 Даташит, Описание, Даташиты
STB/P70L60Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m) Typ
12 @ VGS=10V
60V 70A
18 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
60
±20
70
58.6
206
272
125
87.5
-55 to 175
1.2
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Sep,10,2010
www.samhop.com.tw
Downloaded from Elcodis.com electronic components distributor









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STB70L60 Даташит, Описание, Даташиты
STB/P70L60
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
60
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=35A
VGS=4.5V , ID=29A
VDS=10V , ID=35A
VDS=25V,VGS=0V
f=1.0MHz
VDD=30V
ID=1A
VGS=10V
RGEN= 60 ohm
VDS=30V,ID=25A,VGS=10V
VDS=30V,ID=25A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=15A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
Typ Max Units
1
±100
V
uA
nA
23V
12 16 m ohm
18 25 m ohm
38 S
2670
320
210
pF
pF
pF
52 ns
50 ns
105 ns
16 ns
48 nC
6 nC
13 nC
0.9 1.3 V
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Sep,10,2010
www.samhop.com.tw









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STB70L60 Даташит, Описание, Даташиты
STB/P70L60
55
VGS =4.5V
44 VGS =5V
VGS =10V
33
VGS =4V
22
VGS =3.5V
11
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
Ver 1.1
60
48
36
T j=125 C
24
25 C -55 C
12
0
0.0 0.8 1.6 2.4 3.2 4.0 4.8
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
36
30
24
V GS =4.5V
18
12
V GS =10V
6
1
1 11 22 33 44 55
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
2.0
1.8 V G S =10V
ID=35A
1.6
1.4
1.2 V G S =4.5V
ID=29A
1.0
0.0
0
25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
3
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
Sep,10,2010
www.samhop.com.tw
Downloaded from Elcodis.com electronic components distributor










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Номер в каталогеОписаниеПроизводители
STB70L60N-Channel Logic Level Enhancement Mode Field Effect TransistorSamHop
SamHop

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