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PDF STP60L60A Data sheet ( Hoja de datos )
| Número de pieza | STP60L60A | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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STB/P60L60AGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
16 @ VGS=10V
60V 50A
22 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
60
±20
50
32
IDM -Pulsed b
145
EAS Avalanche Energy c
125
PD
Maximum Power Dissipation a
TC=25°C
TC=100°C
76
30
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.32
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
Downloaded from Elcodis.com electronic components distributor
1
Jul,31,2009
www.samhop.com.tw
1 page  
STB/P60L60A
Ver 1.0
15V
VDS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
DR IVE R
+
- VDD
A
Unclamped Inductive Test Circuit
Figure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
2
1
D=0.5
0.2
0.1
0.1 0.05
0.02
0.01
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
0.1 1
Square Wave Pulse Duration (msec)
Figure 14. Normalized Thermal Transient Impedance Curve
10
Downloaded from Elcodis.com electronic components distributor
5
Jul,31,2009
www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STP60L60A.PDF ] | |
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