DataSheet26.com

STB60L60 PDF даташит

Спецификация STB60L60 изготовлена ​​​​«SamHop» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STB60L60
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop
логотип SamHop логотип 

8 Pages
scroll

No Preview Available !

STB60L60 Даташит, Описание, Даташиты
STB/P60L60
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m) Max
27 @ VGS=10V
60V 36A
42 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
60
±20
36
29
IDM -Pulsed b
106
EAS Avalanche Energy c
113
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
70
45
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.75
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
Downloaded from Elcodis.com electronic components distributor
1
Sep,17,2008
www.samhop.com.tw









No Preview Available !

STB60L60 Даташит, Описание, Даташиты
STB/P60L60
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VGS=0V , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
60
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=25A
VGS=4.5V , ID=20A
VDS=10V , ID=25A
1
DYNAMIC CHARACTERISTICS b
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
tr
Turn-On DelayTime
Rise Time
tD(OFF)
tf
Turn-Off DelayTime
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN=60 ohm
VDS=15V,ID=25A,VGS=10V
VDS=15V,ID=25A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage
VGS=0V,IS=10A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Ctcle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=1.25mH,VDD=30V,VGS=10V.(See Figure13)
Typ
2
21
32
26
1830
182
120
45
70
125
38
28
4.5
9
0.84
Max Units
1
±100
V
A
nA
3V
27 m ohm
42 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
10 A
1.3 V
Downloaded from Elcodis.com electronic components distributor
2
Sep,17,2008
www.samhop.com.tw









No Preview Available !

STB60L60 Даташит, Описание, Даташиты
STB/P60L60
Ver 1.0
60
VGS =10V
48 VGS =5V
VGS =6V
36
24
VGS =4V
12
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
60
48
36
24 T j=125 C
12
25 C
-55 C
0
0.0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
60
50
40
30
V GS =10V
20
10
1
1 12 24 36 48 60
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
2.0
1.8 V G S =10V
ID=25A
1.6
1.4
1.2
1.0
0.8
0
25 50 75 100 125 150
Tj, Junction Temperature(°C ) Tj(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.4
1.3 ID=250uA
1.2
1.1
1.0
0.9
0.8
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,17,2008
3 www.samhop.com.tw
Downloaded from Elcodis.com electronic components distributor










Скачать PDF:

[ STB60L60.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
STB60L60N-Channel Logic Level Enhancement Mode Field Effect TransistorSamHop
SamHop
STB60L60AN-Channel Logic Level Enhancement Mode Field Effect TransistorSamHop
SamHop

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск