STC3116E PDF даташит
Спецификация STC3116E изготовлена «SamHop» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | STC3116E |
Описание | N-Channel Enhancement Mode Field Effect Transistor |
Производители | SamHop |
логотип |
7 Pages
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STC3116EGre
Pro
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
30V
ID RDS(ON) (mΩ) Max
94 @ VGS=10V
2A 107 @ VGS=4.5V
139 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S OT-323
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
30
±12
2
1.6
8
1
0.64
-55 to 150
125
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
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STC3116E
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=24V , VGS=0V
VGS= ±12V , VDS=0V
30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=1.0A
VGS=4.5V , ID=0.9A
VGS=2.5V , ID=0.8A
VDS=5V , ID=1.0A
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=15V,ID=1.0A,VGS=10V
VDS=15V,ID=1.0A,
VGS=10V
0.5
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS= 1.0A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
Typ Max Units
V
1 uA
±10 uA
0.9 1.5
V
75 94 m ohm
82 107 m ohm
103 139 m ohm
6.5 S
396 pF
56 pF
33 pF
46 ns
77 ns
413 ns
48 ns
3.8 nC
0.6 nC
1.3 nC
0.82 1.2
V
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STC3116E
9.0
VGS=10V
VGS=4.5V
7.2
VGS=3V
VGS=2.5V
5.4 VGS=2V
3.6
1.8
VGS=1.5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
240
200
160
VG S = 2.5V
120
VG S = 4.5V
80
VGS =10V
40
1
0.1 1.8 3.6 5.4 7.2 9.0
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
10
8
6
4
2 Tj=125 C
25 C -55 C
0
0 0.6 1.2 1.8 2.4 3.0 3.6
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
V G S =10V
1.8 ID=1A
V G S =4.5V
1.6 ID=0.9A
1.4
1.2 V G S =2.5V
ID= 0.8A
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(°C ) Tj(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.20
I D=250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
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STC3116E | N-Channel Enhancement Mode Field Effect Transistor | SamHop |
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