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Si4450DY PDF даташит

Спецификация Si4450DY изготовлена ​​​​«TEMIC» и имеет функцию, называемую «N-Channel Enhancement-Mode MOSFET».

Детали детали

Номер произв Si4450DY
Описание N-Channel Enhancement-Mode MOSFET
Производители TEMIC
логотип TEMIC логотип 

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Si4450DY Даташит, Описание, Даташиты
N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
60
rDS(on) (W)
0.024 @ VGS = 10 V
0.03 @ VGS = 6.0 V
ID (A)
"7.5
"6.5
Si4450DY
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
D
G
S
N-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
60
"20
"7.5
"5.5
"50
2.1
2.5
1.6
–55 to 150
V
A
W
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
RthJA
50 _C/W
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document
#1226.
Siliconix
S-47958—Rev. C, 15-Apr-96
1









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Si4450DY Даташит, Описание, Даташиты
Si4450DY
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamic
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 7.5 A
VGS = 6.0 V, ID = 6.5 A
VDS = 15 V, ID = 7.5 A
IS = 2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = 30 V, VGS = 10 V, ID = 7.5 A
VDD = 30 V, RL = 30 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.1 A, di/dt = 100 A/ms
Min Typa Max Unit
2V
"100 nA
1
mA
20
20 A
0.020
0.025
0.024
0.03
W
18.5 S
0.75 1.2
V
31 50
7.7 nC
8.3
16 30
11 20
41 80 ns
21 40
46 80
2 Siliconix
S-47958—Rev. C, 15-Apr-96









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Si4450DY Даташит, Описание, Даташиты
Si4450DY
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
50
VGS = 10, 9, 8, 7, 6 V
40
Transfer Characteristics
50
40
30
20 5 V
10
0
0
0.05
4, 3 V
2 4 6 8 10
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
0.03 VGS = 6 V
0.02
VGS = 10 V
0.01
0
0 10 20 30 40
ID – Drain Current (A)
Gate Charge
10
8
VGS = 30 V
ID = 7.5 A
6
50
30
20
10
0
0
2400
TC = 125_C
24
25_C
–55_C
6
8
VGS – Gate-to-Source Voltage (V)
Capacitance
10
2000
1600
Ciss
1200
800
400
0
0
Coss
Crss
10 20 30 40 50
VDS – Drain-to-Source Voltage (V)
60
On-Resistance vs. Junction Temperature
2.0
1.6
VGS = 10 V
ID = 7.5 A
1.2
4 0.8
2 0.4
0
0 7 14 21 28
Qg – Total Gate Charge (nC)
Siliconix
S-47958—Rev. C, 15-Apr-96
35
0
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
3










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