SI2302 PDF даташит
Спецификация SI2302 изготовлена «VTR» и имеет функцию, называемую «20V N-Channel Enhancement Mode MOSFET». |
|
Детали детали
Номер произв | SI2302 |
Описание | 20V N-Channel Enhancement Mode MOSFET |
Производители | VTR |
логотип |
4 Pages
No Preview Available ! |
VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@
RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
85m Ω
115mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SOT-23
SI2302
D
GS
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation 2)
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Junction-to-Ambient Thermal Resistance (PCB mounted) 3)
TA = 25o
TA = 75oC
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
Limit
20
±8
2.3
8
1.25
0.8
-55 to 150
100
166
1)
2)
3)
Unit
V
A
W
oC
oC/W
www.vtr.so
No Preview Available ! |
20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Static
Symbol
Test Condition
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance
Dynamic
BVDSS VGS = 0V, ID = 10uA
RDS(on)
VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
VGS(th) VDS =VGS, ID = 250uA
VDS = 16V, V GS = 0V
IDSS
VDS = 20V, V GS = 0V TJ=55
IGSS VGS = ± 8V, VDS = 0V
gfs VDS = 5V, ID = 3.6A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 10V, I D = 3.6A
VGS = 4.5V
VDD = 10V, RL=5.5 Ω
ID 3.6A,V GEN = 4.5V
RG = 6Ω
VDS = 10V, VGS = 0V
f = 1.0 MHz
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = 1.6A, V GS = 0V
Pulse test: pulse width <= 300us, duty cycle<= 2%
SI2302
Min.
Typ.
Miax.
Unit
20 V
70 85
mΩ
85 115
0.6 V
1
uA
10
±100
nA
10 S
5.4 10
0.65
1.6
12 25
36 60
34 60
10 25
340
115
33
nC
ns
pF
1.2 V
www.vtr.so
No Preview Available ! |
20V N-Channel Enhancement Mode MOSFET
SI2302
JinYu
semiconductor
www.vtr.so
Скачать PDF:
[ SI2302.PDF Даташит ]
Номер в каталоге | Описание | Производители |
SI2300DS | N-Channel 30-V (D-S) MOSFET | Vishay Siliconix |
SI2301 | P-Channel Enhancement Mode MOSFET | JinYu |
SI2301 | P-Channel 20-V(D-S) MOSFET | YANGJING |
SI2301 | P-Channel Enhancement Mode Field Effect Transistor | MCC |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |