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AUIRFN8458 PDF даташит

Спецификация AUIRFN8458 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Dual N-Channel MOSFET».

Детали детали

Номер произв AUIRFN8458
Описание Dual N-Channel MOSFET
Производители International Rectifier
логотип International Rectifier логотип 

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AUIRFN8458 Даташит, Описание, Даташиты
 
AUTOMOTIVE GRADE
AUIRFN8458
Features
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast swithcing speed and
improved repetitive avalanche rating. These features
combine to make this produuct an extremely efficient and
reliable devoce for use in Automotive and wide variety of
other applications.
Applications
12V Automotive Systems
Low Power Brushed Motor
Braking
VDSS
RDS(on) typ.
max
ID
(@TC (Bottom) = 25°C
  
40V
8.0m
10m
43A
G
Gate
DUAL PQFN 5X6 mm
D
Drain
S
Source
Base Part Number
Package Type
 
AUIRFN8458
 
Dual PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
 
AUIRFN8458TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC (Bottom) = 25°C
ID @ TC (Bottom) = 100°C
IDM
PD @TC (Bottom) = 25°C
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Max.
43
30
180
34
0.23
± 20
35
37
See Fig. 14, 15, 22a, 22b
Units
A
W
W/°C
V
mJ
A
-55 to + 175
°C  
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2014 International Rectifier
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AUIRFN8458 Даташит, Описание, Даташиты
  AUIRFN8458
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
––– 4.4
––– 50
––– 105 °C/W
––– 82
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
RG
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
IDSS Drain-to-Source Leakage Current
40 ––– ––– V VGS = 0V, ID = 250µA
––– 37 ––– mV/°C Reference to 25°C, ID = 1.0mA
––– 8.0 10 m VGS = 10V, ID = 26A
2.2 ––– 3.9
V VDS = VGS, ID = 25µA
56 ––– ––– S VDS = 10V, ID = 26A
––– 1.9 ––– 
––– ––– 1.0
––– ––– 150
µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max.
nA
VGS = 20V
VGS = -20V
Units
Conditions
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
––– 22 33
––– 6.3 –––
––– 7.6 –––
––– 14.4 –––
ID = 26A
nC
VDS = 20V
VGS = 10V
ID = 26A, VDS =0V, VGS = 10V
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
––– 9.7 –––
–––
–––
71
11
–––
–––
ns
––– 19 –––
––– 1060 –––
––– 170 –––
––– 100 –––
––– 210 –––
pF
––– 250 –––
   
VDD = 26V
ID = 26A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
––– ––– 43
A
MOSFET symbol
showing the
D
ISM
Pulsed Source Current
(Body Diode)
––– ––– 180
A
integral reverse
G
p-n junction diode.
S
VSD
dv/dt
trr  
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.3 V TJ = 25°C, IS = 26A, VGS = 0V
––– 8.2 ––– V/ns TJ = 175°C, IS= 26A, VDS = 40V
–––
–––
–––
–––
18
19
9.6
11
–––
–––
–––
–––
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 26A
di/dt = 100A/µs
––– 0.89 ––– A TJ = 25°C
  2 www.irf.com © 2014 International Rectifier
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AUIRFN8458 Даташит, Описание, Даташиты
 
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.15V
4.8V
1 4.8V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 1 Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
VDS = 10V
60µs PULSE WIDTH
1.0
3 4 5 6 7 8 9 10 11 12
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
1000
100
AUIRFN8458
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.15V
4.8V
10
4.8V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 2 Typical Output Characteristics
2.0
ID = 43A
1.8 VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance vs. Temperature
14.0
12.0
10.0
8.0
ID= 26A
VDS= 32V
VDS= 20V
VDS= 8.0V
6.0
4.0
2.0
0.0
0
5 10 15 20 25
QG, Total Gate Charge (nC)
30
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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Номер в каталогеОписаниеПроизводители
AUIRFN8458Dual N-Channel MOSFETInternational Rectifier
International Rectifier
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AUIRFN8459TRDual N-Channel MOSFETInternational Rectifier
International Rectifier

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