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PDF STS2306A Data sheet ( Hoja de datos )
| Número de pieza | STS2306A | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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S T S 2306AGreen
Product
S amHop Microelectronics C orp.
Apr. 27 2010 V er1.1
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ω ) Max
20V 4.5A
40 @ VGS = 4.5V
50 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
SOT-23-3L
D
S
G
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS 20
V
Gate-S ource Voltage
VGS 10 V
Drain C urrent-C ontinuous a @ TJ=25 C
ID
4.5
A
-P ulsed b
IDM 17 A
Drain-S ource Diode Forward C urrent a
IS
1.25 A
Maximum P ower Dissipation a
PD 1.25 W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
100
C /W
1
1 page  
S TS 2306A
600
C is s
500
400
300
C oss
200
C rss
100
6
0
0 2 4 6 8 10 12
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
600
100
60
10
TD(off)
Tf
Tr
TD(on)
V DS =10V ,ID=1A
1 V G S =4.5V
1 6 10 60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
10
5
4 VDS =10V
ID=4.5A
3
2
1
0
012345 678
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
50
10 R DS(ON) Limit
1
1m1s00us
10s1001m0sms
DC
0.1 VGS =10V
S ingle P ulse
T A=25 C
0.03
0.1 1
10
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
1
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
1000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS2306A.PDF ] | |
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