DataSheet26.com

STS2302A PDF даташит

Спецификация STS2302A изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STS2302A
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

7 Pages
scroll

No Preview Available !

STS2302A Даташит, Описание, Даташиты
STS2302AGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
44 @ VGS= 4.5V
20V 4A
65 @ VGS= 2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S OT23-3L
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
20
±10
4
3.2
15.3
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,31,2010
www.samhop.com.tw









No Preview Available !

STS2302A Даташит, Описание, Даташиты
STS2302A
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= ±10V , VDS=0V
20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=4.5V , ID=4A
VGS=2.5V , ID=3.5A
VDS=5V , ID=4A
VDS=10V,VGS=0V
f=1.0MHz
VDD=10V
ID=1A
VGS=4.5V
RGEN= 6 ohm
VDS=10V,ID=4A,VGS=4.5V
VDS=10V,ID=4A,
VGS=4.5V
0.5
Typ
0.8
35
50
10.5
220
80
65
8.5
14
18
8
6
1.5
2.5
Max Units
1
±100
V
uA
nA
1.5 V
44 m ohm
65 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS= 1A
1
0.8 1.2
A
V
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
Dec,31,2010
2 www.samhop.com.tw









No Preview Available !

STS2302A Даташит, Описание, Даташиты
STS2302A
15
VGS=4.5V
12
VGS=2.5V
VGS=2V
9
6
3 VGS=1.5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
120
100
80
VG S = 2.5V
60
40
VGS =4.5V
20
1
1 3 6 9 12 15
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.1
15
12
9
6
3 Tj=125 C
25 C -55 C
0
0 0.6 1.2 1.8 2.4 3.0 3.6
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8 V G S =4.5V
ID=4A
1.6
1.4
1.2
V G S =2.5V
1.0 ID=3.5A
0
0 25 50 75 100 125 150
Tj, Junction Temperature(°C ) Tj(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
V DS =V G S
1.4 ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.20
I D=250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,31,2010
www.samhop.com.tw










Скачать PDF:

[ STS2302A.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
STS2302AN-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics
STS2302SN-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск