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STS8202 PDF даташит

Спецификация STS8202 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STS8202
Описание Dual N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STS8202 Даташит, Описание, Даташиты
STS8202Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
27 @ VGS=4.5V
28 @ VGS=4.0V
20V 5A 30 @ VGS=3.7V
33 @ VGS=3.1V
38 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S1
D1/D2
S2
TSOT 26
Top View
16
25
34
G1
D1/D2
G2
D1
G1 G2
S1
D2
S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
20
±12
5.0
4.0
20
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jun,18,2014
www.samhop.com.tw









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STS8202 Даташит, Описание, Даташиты
STS8202
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= ±12V , VDS=0V
VDS=VGS , ID=1mA
VGS=4.5V , ID=2.5A
VGS=4.0V , ID=2.5A
VGS=3.7V , ID=2.5A
VGS=3.1V , ID=2.5A
VGS=2.5V , ID=2.5A
VDS=5V , ID=2.5A
VDS=10V,VGS=0V
f=1.0MHz
VDD=16V
ID=2.5A
VGS=4.5V
RGEN= 6 ohm
VDS=16V,ID=5A,
VGS=4.5V
20
0.5
18.5
19.0
19.5
20.0
21.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
Typ
0.8
22.0
23.0
25.0
27.0
29.0
15
240
120
57
30
92
240
145
6.4
1.3
3.7
0.83
Max Units
V
1 uA
±10 uA
1.5 V
27.0 m ohm
28.0 m ohm
30.0 m ohm
33.0 m ohm
38.0 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
Jun,18,2014
2 www.samhop.com.tw









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STS8202 Даташит, Описание, Даташиты
STS8202
Ver 1.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10 RDS(ON) Limit
10us
100us
1 1ms
10ms
0.1 VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1
1
1s
DC
10
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
2.5
2
Mounted on FR-4 board of
1.5 1 inch2 , 2oz
1
0.5
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Mounted on FR-4 board of
1 inch2 , 2oz
10
1
Single Pulse
0.1
0.001
0.01
0.1 1
10
PW - Pulse Width - s
3
100 1000
Jun,18,2014
www.samhop.com.tw










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