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STK900 PDF даташит

Спецификация STK900 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STK900
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STK900 Даташит, Описание, Даташиты
Gre
Pro
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STK900
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
100V
1A
1.9 @ VGS=10V
2.2 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D
SOT-89
S
D
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage d
VGS Gate-Source Voltage
ID Drain Current-Continuous
IDM -Pulsed a
TA=25°C
TA=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
1
0.8
3.16
1.1
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jun,22,2011
www.samhop.com.tw









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STK900 Даташит, Описание, Даташиты
STK900
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage d
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=10mA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=0.5A
VGS=4.5V , ID=0.5A
VDS=10V , ID=0.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=45V
ID=0.5A
VGS=10V
RGEN= 6 ohm
VDS=45V,ID=0.5A,VGS=10V
VDS=45V,ID=0.5A,VGS=4.5V
VDS=45V,ID=0.5A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=0.1A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13)
d.Pulse Test:Pulse Width <_ 1us, Duty Cycle <_ 1%.
Typ
1.7
1.50
1.75
0.88
64
17.4
8.5
7.5
8.5
65
12
1.9
1.23
0.43
0.62
0.8
Max Units
V
1 uA
±10 uA
3
1.90
2.20
V
ohm
ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.3 V
Jun,22,2011
2 www.samhop.com.tw









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STK900 Даташит, Описание, Даташиты
STK900
1.50
1.25
1.00
0.75
0.50
VGS = 10V
VGS = 4V
VGS = 3.5V
VGS = 3V
0.25
0
0 1.0 2.0 3.0 4.0 5.0
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
3.0
2.5
VGS = 4.5V
2.0
1.5
VGS = 10V
1.0
0.5
0
0.1 0.3 0.6 0.9 1.2 1.5
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
1.1
VDS = VGS
ID = 250uA
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.0
1.0
0.8
0.6
Tj=125 C
0.4
-55 C
0.2
25 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.0
1.8 VGS=10V
ID=0.5A
1.6
1.4
VGS=4.5V
1.2 ID=0.5A
1.0
0.8
0
25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.3
ID = 250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,22,2011
www.samhop.com.tw










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STK900N-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
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