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STT03N20 PDF даташит

Спецификация STT03N20 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STT03N20
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STT03N20 Даташит, Описание, Даташиты
STT03N20Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
200V
0.7A
2.43 @ VGS=10V
2.66 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a c
TA=25°C
TA=70°C
IDM -Pulsed c
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
200
±20
0.7
0.56
4.7
3
1.9
-55 to 150
42
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Apr,18,2014
www.samhop.com.tw









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STT03N20 Даташит, Описание, Даташиты
STT03N20
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=160V , VGS=0V
VGS= ±20V , VDS=0V
200
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=0.35A
VGS=4.5V , ID=0.33A
VDS=10V , ID=0.35A
VDS=25V,VGS=0V
f=1.0MHz
VDD=100V
ID=0.35A
VGS=10V
RGEN= 6 ohm
VDS=100V,ID=0.35A,VGS=10V
VDS=100V,ID=0.35A,VGS=4.5V
VDS=100V,ID=0.35A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=0.8A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
Typ
1.7
1.94
1.97
1.3
265
20
12
11
9
24
6
6.4
3.6
1
1.7
0.82
Max Units
1
±100
V
uA
nA
3
2.43
2.66
V
ohm
ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.2 V
Apr,18,2014
2 www.samhop.com.tw









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STT03N20 Даташит, Описание, Даташиты
STT03N20
1.5
VGS=10V
1.2
VGS=4.5V
0.9
VGS=3V
0.6
0.3 VGS=2.5V
0
012 3456
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
4.2
3.5
2.8
V GS =4.5V
2.1
V GS =10V
1.4
0.7
0.01
0.01
0.3 0.6 0.9 1.2
ID, Drain Current(A)
1.5
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
1.5
1.2
0.9
Tj=125 C
0.6
25 C -55 C
0.3
0
0 0.7 1.4 2.1 2.8 3.5 4.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.5
2.2
V G S =10V
I D =0 . 3 5 A
1.9
1.6
V G S =4.5V
1.3 ID=0.33A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Apr,18,2014
3 www.samhop.com.tw










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Номер в каталогеОписаниеПроизводители
STT03N20N-Channel Logic Level Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

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