STT10L01 PDF даташит
Спецификация STT10L01 изготовлена «SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | STT10L01 |
Описание | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Производители | SamHop Microelectronics |
логотип |
7 Pages
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STT10L01Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
140 @ VGS=10V
3A
225 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
100
±20
3.0
2.4
20
16
3
1.9
-55 to 150
42
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
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STT10L01
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3A
VGS=4.5V , ID=2.4A
VDS=5V , ID=3A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=3A,VGS=10V
VDS=50V,ID=3A,VGS=4.5V
VDS=50V,ID=3A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage b
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Typ Max Units
1
±100
V
uA
nA
1.5 3
V
112 140 m ohm
167 225 m ohm
4S
455 pF
48 pF
32 pF
10.5
11
20
6.8
8
4.5
1.2
2.6
ns
ns
ns
ns
nC
nC
nC
nC
0.78 1.2
V
Aug,05,2010
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STT10L01
6.0
VGS=10V
4.8
VGS=4.5V
VGS=4V
3.6
VGS=3.5V
2.4
VGS=3V
1.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
300
250
200
V GS =4.5V
150
100
V GS =10V
50
1
1 1.2 2.4 3.6 4.8 6.0
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
8.0
6.4
4.8
3.2
1.6
0
0
Tj=125 C
25 C
55 C
1 234 5
6
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.5
V G S =10V
2.2 ID=3A
1.9
1.6
1.3 V G S =4.5V
I D =2 . 4 A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4 V DS =V GS
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
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STT10L01 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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