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STT60GK12B PDF даташит

Спецификация STT60GK12B изготовлена ​​​​«Sirectifier» и имеет функцию, называемую «Thyristor-Thyristor Modules».

Детали детали

Номер произв STT60GK12B
Описание Thyristor-Thyristor Modules
Производители Sirectifier
логотип Sirectifier логотип 

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STT60GK12B Даташит, Описание, Даташиты
STT60GKxxB
Thyristor-Thyristor Modules
Type
STT60GK08B
STT60GK12B
STT60GK14B
STT60GK16B
STT60GK18B
VRSM
VDSM
V
900
1300
1500
1700
1900
VRRM
VDRM
V
800
1200
1400
1600
1800
Tolerance:-+0.5mm
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
I , ITRMS FRMS TVJ=TVJM
I , ITAVM FAVM TC=85oC; 180o sine
TVJ=45oC
ITSM, IFSM
VR=0
TVJ=TVJM
VR=0
TVJ=45oC
i2dt
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ=TVJM
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.45A
diG/dt=0.45A/us
repetitive, IT=150A
non repetitive, IT=ITAVM
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=300us
PGAV
VRGM
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
Md
Mounting torque (M5)
Terminal connection torque (M5)
Weight Typ.
Maximum Ratings
94
60
1500
1600
1350
1450
11200
10750
9100
8830
150
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
3000
3600
2.5-4.0/22-35
2.5-4.0/22-35
110
Unit
A
A
A2s
A/us
V/us
W
W
V
oC
V~
Nm/lb.in.
g









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STT60GK12B Даташит, Описание, Даташиты
STT60GKxxB
Thyristor-Thyristor Modules
Symbol
Test Conditions
IRRM, IDRM
VTM
VTO
TVJ=TVJM; VR=VRRM; VD=VDRM
ITM=180A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
rT
VGT VD=6V;
IGT VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
VGD TVJ=TVJM;
VD=2/3VDRM
IGD
IL
TVJ=25oC; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
IH TVJ=25oC; VD=6V; RGK=
tgd
TVJ=25oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
tq
TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS TVJ=TVJM; IT, IF=50A; -di/dt=3A/us
IRM
RthJC
per thyristor/diode; DC current
per module
RthJK
per thyristor/diode; DC current
per module
dS Creeping distance on surface
dA Strike distance through air
a Maximum allowable acceleration
Characteristic Values
5
1.65
0.85
3.7
1.5 max
1.6 max
100
200
0.2
10
450
200
2
typ. 150
100
24
0.45
0.225
0.65
0.325
12.7
9.6
50
Unit
mA
V
V
m
V
mA
V
mA
mA
mA
us
us
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* Copper base plate
* Glass passivated chips
* Isolation voltage 3600 V~
* UL file NO.310749
* RoHs compliant
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits









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STT60GK12B Даташит, Описание, Даташиты
STT60GKxxB
Thyristor-Thyristor Modules
100
W
.1/2
.1/2
STT60B
STD60B
75
50
rec. 30
15
sin.
180
120
90
rec.
180
60 cont.
25
PTAV
0
0 ITAV
25
50
Fig.1L Power dissipation per thyristor vs. on-state current
A
75
200
W
.
.
1
1
STT60B
STD60B
150
100
50
Pvtot
0
0 IRMS
50
100
Fig.2L Power dissipation per module vs. rms current
A 150
400
W
.
.
2
2
STT60B
STD60B
300
200
R
L
100
Pvtot
0
0 ID 25 50 75 100 125 A 150
Fig.3L Power dissipation of two modules vs. direct current
100
1.2
W 1.4
75
1.7
1
0.8 0.6 0.5 Rth(j-a)
2
50 2.5
3
25
PTAV
3.5
4
5
6
8
K/W
0
0 Ta 50
100
Fig.1R Power dissipation per thyristor vs. ambient temp
OC
150
200
0.3 0.2
0.1 Rth(c-a)
W 0.4
150 0.5
0.6
0.7
0.8
100
1
1.2
1.5
50 2
3
Pvtot 4
K/W
0
0
Ta
50
100
Fig.2R Power dissipation per module vs. case temp
65
Tc
75
85
95
105
OC
115
125
OC 150
400 0.15 0.1 0.05 Rth(c-a)
W
0.2
300 0.25
0.3
0.4
200 0.5
0.6
0.7
0.8
100 1.2 1
2 1.5
Pvtot
K/W
0
0 Ta
50
100 OC
Fig.3R Power dissipation of two modules vs. case temp
65
Tc
75
85
95
105
115
OC
125
150










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Номер в каталогеОписаниеПроизводители
STT60GK12Thyristor-Thyristor ModulesSirectifier
Sirectifier
STT60GK12BThyristor-Thyristor ModulesSirectifier
Sirectifier

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