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PDF STT432S Data sheet ( Hoja de datos )
| Número de pieza | STT432S | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STT432SGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
11.5 @ VGS=10V
40V 11A
15 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
40
±20
11
8.8
44
110
3
1.9
-55 to 150
42
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Aug,04,2009
www.samhop.com.tw
1 page  
STT432S
Ver 1.0
15V
VDS
L
DR IVE R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
A
Unclamped Inductive Test Circuit
F igure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001
0.001
0.01 0.1
1
Square Wave Pulse Duration(sec)
P DM
t1
t2
1. RthJA (t)=r (t) * R th JA
2. RthJA=See Datasheet
3. TJM-TA = PDM* RthJA (t)
4. Duty Cycle, D=t1/t2
10 100
Figure 14. Normalized Thermal Transient Impedance Curve
1000
Aug,04,2009
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STT432S.PDF ] | |
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