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PDF STT6601 Data sheet ( Hoja de datos )
| Número de pieza | STT6601 | |
| Descripción | N & P-Channel Enhancement Mode Mos.FET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
STT6601
(N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ
(P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench
technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as notebook computer power management
and other battery-powered circuits where high-side switching, low in-line power loss and resistance to transients are needed.
FEATURES
z N-Channel
30V/2.8A, RDS(ON) = 68mΩ@VGS = 10 V
30V/2.3A, RDS(ON) = 78mΩ@VGS = 4.5 V
30V/1.5A, RDS(ON) = 108mΩ@VGS = 2.5 V
z P-Channel
-30V/-2.8A, RDS(ON) = 105mΩ@VGS = 10 V
-30V/-2.5A, RDS(ON) = 120mΩ@VGS = 4.5 V
-30V/-1.5A, RDS(ON) = 150mΩ@VGS = 2.5 V
z Super high density cell design for extremely low RDS(ON)
z Exceptional on-resistance and maximum DC current capability
z TSOP-6P package design
PACKAGE DIMENSIONS
APPLICATIONS
z Battery powered systems
z Portable devices
z Power management in NB
z DC to DC converter, load switch, DSC,
LCD display inverter
Week code: A~Z (1~26); a ~ z (27 ~ 52)
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
Power Dissipation
Continuous Source Current (Diode Conduction)
Thermal Resistance- Junction to Ambient
T ≦ 10 sec
Steady State
Operating Junction and Storage Temperature Range
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 Max
0 0.10
0.70
1.00
0.12 Ref
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 Ref
0.60 Ref
0° 10°
0.30
0.50
0.95 Ref
1.90 Ref
Symbol
VDS
VGS
ID @TA=25℃
ID @TA=70℃
IDM
PD @TA=25℃
PD @TA=70℃
IS
RθJA
Tj, Tstg
Ratings
N-Channel
P-Channel
30 -30
±12 ±12
2.8 -2.8
2.3 -2.1
10 -8
1.15
0.75
1.25
-1.4
50 52
90 90
-55 ~ +150
Unit
V
V
A
A
W
A
℃/W
℃
01-June-2007 Rev. C
Page 1 of 6
1 page  
Elektronische Bauelemente
CHARACTERISTIC CURVES (N-Channel)
STT6601
(N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ
(P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
01-June-2007 Rev. C
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STT6601.PDF ] | |
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