STT812A PDF даташит
Спецификация STT812A изготовлена «SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | STT812A |
Описание | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Производители | SamHop Microelectronics |
логотип |
8 Pages
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STT812AGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
569 @ VGS=10V
80V 1.4A
674 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
80
±20
1.4
1.1
9.4
3
1.9
-55 to 150
42
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
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STT812A
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=64V , VGS=0V
VGS= ±20V , VDS=0V
80
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=0.7A
VGS=4.5V , ID=0.65A
VDS=10V , ID=0.7A
VDS=25V,VGS=0V
f=1.0MHz
VDD=40V
ID=0.7A
VGS=10V
RGEN= 6 ohm
VDS=40V,ID=0.7A,VGS=10V
VDS=40V,ID=0.7A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=0.7A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
Typ
1.9
455
499
2.4
150
21
13
14.8
14.7
133
35
3
0.77
1
0.84
Max Units
V
1 uA
±10 uA
3V
569 m ohm
674 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
Sep,13,2013
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STT812A
4.0
3.2
VGS=10V
2.4
1.6
VGS=4.5V
VGS=3.5V
0.8
VGS=3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
1200
1000
800
600 V GS =4.5V
400 V GS =10V
200
1
0.1 0.8 1.6 2.4 3.2 4.0
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
3.5
2.8
2.1
Tj=125 C
1.4
25 C -55 C
0.7
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8 V G S =10V
I D =0 . 7 A
1.6
1.4
V G S =4.5V
1.2 ID=0.65A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
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STT812A | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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