DataSheet26.com

STT01L07 PDF даташит

Спецификация STT01L07 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STT01L07
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

8 Pages
scroll

No Preview Available !

STT01L07 Даташит, Описание, Даташиты
STT01L07Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
526 @ VGS=10V
70V 1.5A
617 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
ESD Protected.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
70
±20
1.5
1.2
9
3.75
3
1.9
-55 to 150
42
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,19,2013
www.samhop.com.tw









No Preview Available !

STT01L07 Даташит, Описание, Даташиты
STT01L07
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=56V , VGS=0V
VGS= ±20V , VDS=0V
70
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=0.75A
VGS=4.5V , ID=0.75A
VDS=10V , ID=0.75A
VDS=25V,VGS=0V
f=1.0MHz
VDD=35V
ID=0.75A
VGS=10V
RGEN= 6 ohm
VDS=35V,ID=0.75A,VGS=10V
VDS=35V,ID=0.75A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=0.75A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.3mH,VDD = 35V.(See Figure13)
e.Drain current limited by maximum junction temperature.
Typ
1.8
421
457
2.1
193
24
14
16.5
13
195
30
3.6
0.82
1.1
0.82
Max Units
V
1 uA
±10 uA
3V
526 m ohm
617 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
Dec,19,2013
2 www.samhop.com.tw









No Preview Available !

STT01L07 Даташит, Описание, Даташиты
STT01L07
4.0
VGS=10V
3.2
VGS=4.5V
VGS=3.5V
2.4
1.6 VGS=3V
0.8
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
1200
1000
800
600 V GS =4.5V
400 V GS =10V
200
1
0.1 0.8 1.6 2.4 3.2 4.0
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
3.5
2.8
2.1
Tj=125 C
1.4
-55 C
0.7
25 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8 V G S =10V
I D =0 . 7 5 A
1.6
1.4 V G S =4.5V
I D =0 . 7 5 A
1.2
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.20
ID=250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,19,2013
3 www.samhop.com.tw










Скачать PDF:

[ STT01L07.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
STT01L07N-Channel Logic Level Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск