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PDF STM6962 Data sheet ( Hoja de datos )
| Número de pieza | STM6962 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
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STM6962Green
Product
SamHop Microelectronics Corp.
Aug 29.2006
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) ( m Ω ) Max
60V 6.5A
36 @ VGS = 10V
42 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
D1 D1 D2 D2
8 7 65
SO-8
1
1 23 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS 20
a
Drain Current-Continuous @Ta
25 C
70 C
ID
-Pulsed b
IDM
6.5
5.5
25
Drain-Source Diode Forward Current a
IS
1.7
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Ta= 25 C
Ta=70 C
PD
TJ, TSTG
2
1.44
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a R JA
62.5
1
Unit
V
V
A
A
A
A
W
C
C /W
1 page  
S TM6962
1500
1250
1000
750
C is s
500
6 C oss
250
C rss
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
10
VDS =48V
8 ID=6.5A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
600
100
60 Tr
Tf
10
V DS =30V ,ID=6.5A
1 V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
9
50
30
10
R DS(ON) Limit
1
1s 100m1s0ms
DC
0.1 VGS =10V
S ingle P ulse
0.03 TA=25 C
0.1 1
10 60
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
1000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STM6962.PDF ] | |
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