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PDF STT3471P Data sheet ( Hoja de datos )

Número de pieza STT3471P
Descripción P-Channel Enhancement Mode Mos.FET
Fabricantes SeCoS 
Logotipo SeCoS Logotipo



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Elektronische Bauelemente
STT3471P
-2A, -100V, RDS(ON) 350 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density trench process to provide Low RDS(on)
and to ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe TSOP-6
saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
Leader Size
TSOP-6
3K
7’ inch
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
DD
DD
GS
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
TA= 25°C
TA= 70°C
Power Dissipation 1
TA= 25°C
TA= 70°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient 1
t 5 sec
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RJA
Rating
-100
±20
2.0
1.6
-8
-2.1
2.0
1.3
-55~150
62.5
110
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
08-Apr-2011 Rev. A
Any changes of specification will not be informed individually.
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