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PDF STM301N Data sheet ( Hoja de datos )
| Número de pieza | STM301N | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STM301N (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STM301N
Ver1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
5.2A
48 @ VGS=10V
56 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
100
±20
5.2
4.2
28
156
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jan,25,2010
www.samhop.com.tw
1 page  
STM301N
15V
VDS
L
DR IVE R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
A
Unclamped Inductive Test Circuit
F igure 13a.
Ver1.0
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
0.001
0.0000 1
Single Pulse
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
0.000 1
0 .001
0.01 0. 1
1
Square Wave Pulse Duration(sec)
10
Figure 14. Normalized Thermal Transient Impedance Curve
10 0
1 00 0
Jan,25,2010
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STM301N.PDF ] | |
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