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STM101N PDF даташит

Спецификация STM101N изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STM101N
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STM101N Даташит, Описание, Даташиты
Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STM101N
Ver1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (m) Typ
100V
3A
170 @ VGS=10V
260 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
100
±20
3
2.4
15
2.3
2.8
1.8
-55 to 150
44
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Oct,08,2010
www.samhop.com.tw









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STM101N Даташит, Описание, Даташиты
STM101N
Ver1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=1.5A
VGS=4.5V , ID=1A
VDS=10V , ID=1.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=50V,ID=1.5A,VGS=10V
VDS=50V,ID=1.5A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD=50V,VGS=10V.(See Figure13)
Typ Max Units
1
±100
V
uA
nA
1.8 3
V
170 210 m ohm
260 350 m ohm
5.5 S
310 pF
35 pF
20 pF
8
9
16.5
3.5
5.5
1
2
ns
ns
ns
ns
nC
nC
nC
0.785 1.3 V
Oct,08,2010
2 www.samhop.com.tw









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STM101N Даташит, Описание, Даташиты
STM101N
Ver1.0
10
VGS=10V
VGS=6V
8
6 VGS=5V
4
VGS=4V
2
VGS=3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
360
300
240
V GS =10V
180
120
60
1
1 2 4 6 8 10
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
10
8
6
Tj=125 C
4
25 C -55 C
2
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8
V G S =10V
1.6 ID=1.5A
1.4
1.2
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,08,2010
3 www.samhop.com.tw










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STM101NN-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

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