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PDF STM4470 Data sheet ( Hoja de datos )
| Número de pieza | STM4470 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STM4470 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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STM4470Green
Product
SamHop Microelectronics Corp.
Oct. 16. 2006 Ver1.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS d
ID
RDS(ON) ( m Ω ) Max
40V 10A
10 @ VGS = 10V
13 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a @TJ=25 C
-Pulsed b
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol
VDS d
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
40
20
10
39
1.7
2.5
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
R JA
50
1
Unit
V
V
A
A
A
W
C
C /W
1 page  
STM4470
1800
1500
1200
Ciss
900
6 600
Coss
300
Crss
0
0 5 10 15 20 25 30
VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
600
100
60
10
TD(off)
Tr
Tf
TD(on)
10
VDS=20V
8 ID=10A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
50
10
10ms
100ms
1
1s
DC
V DS =20V ,ID=1A
1 VGS=10V
1 6 10 60 100 300 600
Rg, Gate Resistance (Ω)
Figure 11.switching characteristics
9
0.1 VGS=10V
Single Pulse
0.03 TA=25 C
0.1
1
10 30 50
VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
0.00001
Single Pulse
P DM
t1
t2
on 1. RthJA (t)=r (t) * R JAth
2. R tJhA=See Datasheet
3. TJM-TA = PDM* R JA t(ht)
4. Duty Cycle, D=t1/t2
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
10
100
5
1000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STM4470.PDF ] | |
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