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AP02N60H-H-HF-3 PDF даташит

Спецификация AP02N60H-H-HF-3 изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP02N60H-H-HF-3
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP02N60H-H-HF-3 Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP02N60H/J-H-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Repetitive Avalanche Rated
D
Fast Switching Speed
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
700V
8.8
1.4A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
D (tab)
G D S TO-252 (H)
The AP02N60H-H-HF-3 is in the TO-252 package which is widely preferred for
commercial and industrial surface mount applications such as medium-power
AC/DC converters. The through-hole TO-251 version (AP02N60J-H-HF-3) is
available where a small PCB footprint or attached heatsink is required.
GD
S
Absolute Maximum Ratings
D (tab)
TO-251 (J)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
EAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Rating
700
± 30
1.4
0.9
5.6
39
0.31
49
1.4
0.5
-55 to 150
-55 to 150
Symbol
Rthj-a
Rthj-a
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Maximum Thermal Resistance, Junction-ambient
Value
3.2
62.5
110
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
Unit
°C/W
°C/W
°C/W
Ordering Information
AP02N60H-H-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)
AP02N60J-H-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube)
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200807222-3 1/6









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AP02N60H-H-HF-3 Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP02N60H/J-H-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
BVDSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=10mA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=0.6A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=1.0A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V
ID=1.4A
VDS=480V
VGS=10V
VDD=300V
ID=1.4A
RG=10, VGS=10V
RD=214
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
700 -
-V
- 0.6 - V/°C
- - 8.8
2 - 4V
- 0.2 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 14 20 nC
- 2 - nC
- 8.5 - nC
- 9.5 - ns
- 12
- ns
- 21 - ns
- 9 - ns
- 155 240 pF
- 27 - pF
- 14
- pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1.4A, VGS=0V
IS=1.4A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 360 - ns
- 1970 - nC
Notes:
1.Pulse width limited by safe operating area
2.Starting Tj=25oC , VDD=50V , L=50mH , RG=25, IAS=1.4A.
3.Pulse width <300us , duty cycle <2%.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/6









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AP02N60H-H-HF-3 Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
Typical Electrical Characteristics
1.5
T C =25 o C
1
10V
6.0V
5.5V
0.5 5.0V
V G = 4.5 V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS
vs. Junction Temperature
100
150
10
T j = 150 o C
1
T j = 25 o C
0.1
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP02N60H/J-H-HF-3
0.9
T C =150 o C
0.6
0.3
10V
6.0V
5.5V
5.0V
V G = 4.5 V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.6A
V G =10V
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
vs. Junction Temperature
5
4
3
2
1
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/6










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Номер в каталогеОписаниеПроизводители
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