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AP01N40H-HF PDF даташит

Спецификация AP01N40H-HF изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP01N40H-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP01N40H-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP01N40H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
100% Avalanche Rated
Fast Switching Performance
Simple Drive Requirement
RoHS Compliant & Halogen-Free
D
G
S
Description
AP01N40 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01N40J) is available for low-profile
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
400V
16Ω
0.5A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Rating
400
+20
0.5
0.4
2
17.4
2
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
7.2
62.5
110
Units
/W
/W
/W
1
201307113









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AP01N40H-HF Даташит, Описание, Даташиты
AP01N40H/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=0.2A
VDS=VGS, ID=250uA
VDS=10V, ID=0.5A
VDS=400V, VGS=0V
VGS=+20V, VDS=0V
ID=1A
VDS=320V
VGS=10V
VDD=200V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
400 - - V
- - 16 Ω
1 - 3V
- 0.5 -
S
- - 100 uA
- - +100 nA
- 2.9 4.6 nC
- 0.6 - nC
- 0.6 - nC
- 7.7 - ns
- 12 - ns
- 23 - ns
- 73 - ns
- 76 125 pF
- 11 - pF
- 4 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=2A, VGS=0V
IS=1A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 260 - ns
- 460 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP01N40H-HF Даташит, Описание, Даташиты
1.2
T C =25 o C
1
0.8
0.6
10V
9.0V
8.0V
7.0V
V G = 6.0 V
0.4
0.2
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
T j = 150 o C
1
T j = 25 o C
0.1
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP01N40H/J-HF
0.6
T C =150 o C
0.5
0.4
0.3
10V
9.0V
8.0V
7.0V
V G = 6.0 V
0.2
0.1
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.2A
V G =10V
2
1
0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.4
150
2
1.6
1.2
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3










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Номер в каталогеОписаниеПроизводители
AP01N40H-HFN-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics

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