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AP02N40P PDF даташит

Спецификация AP02N40P изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP02N40P
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP02N40P Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
AP02N40P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
400V
5Ω
G ID 1.6A
S
Description
AP02N40 uses rugged design with the best combination of fast
switching and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications. The good thermal performance and low package
cost, Contribute to its wide industry application.
G
DS
TO-220(P)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
400
+30
1.6
1
3
33
5
1
-55 to 150
-55 to 150
Value
3.8
62
Units
V
V
A
A
A
W
mJ
A
Unit
/W
/W
Data & specifications subject to change without notice
1
200901203









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AP02N40P Даташит, Описание, Даташиты
AP02N40P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Static Drain-Source On-Resistance3 VGS=10V, ID=0.7A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=1A
Drain-Source Leakage Current
VDS=400V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=320V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS=+30V, VDS=0V
ID=1A
Gate-Source Charge
VDS=320V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=200V
Rise Time
ID=1A
Turn-off Delay Time
RG=50Ω,VGS=10V
Fall Time
RD=200Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
400 - - V
- - 5Ω
2 - 4V
- 1.5 -
S
- - 25 uA
- - 250 uA
- - +100 nA
- 6.4 10 nC
- 1.2 - nC
- 3.2 - nC
- 8 - ns
- 9 - ns
- 21 - ns
- 12 - ns
- 180 300 pF
- 22 - pF
- 5.6 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Qrr Reverse Recovery Charge
Test Conditions
IS=1.6A, VGS=0V
IS=1A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 150 - ns
- 680 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP02N40P Даташит, Описание, Даташиты
3
T C =25 o C
2
10V
8.0V
7.0V
6.0V
1
V G =5.0V
0
0 4 8 12 16 20 24 28 32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
T j = 150 o C
T j = 25 o C
1
0.1
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP02N40P
2
T C =150 o C
1.6
1.2
10V
8 .0V
7 .0V
6.0 V
0.8 V G =5 .0V
0.4
0
0 5 10 15 20 25 30
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.7A
V G =10V
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
150
1.1
1
0.9
0.8
0.7
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3










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