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CHDTC144EEPT PDF даташит

Спецификация CHDTC144EEPT изготовлена ​​​​«Chenmko Enterprise» и имеет функцию, называемую «NPN Digital Silicon Transistor».

Детали детали

Номер произв CHDTC144EEPT
Описание NPN Digital Silicon Transistor
Производители Chenmko Enterprise
логотип Chenmko Enterprise логотип 

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CHDTC144EEPT Даташит, Описание, Даташиты
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 30 mAmpere
CHDTC144EEPT
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SC-75/SOT-416)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated NPN transistors in one package.
* Built in bias resistor(R1=47kΩ, Typ. )
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
MARKING
WE
CIRCUIT
Gnd In
21
R2
TR
R1
3
Out
SC-75/SOT-416
0.2±00..015
1.0±0.1
0.5
0.5
1.6±0.2
0.3±00..015 0.8±0.10.2±00..015
0.15±0.05
0.1Min.
1.6±0.2
0.6~0.9
0~0.1
Dimensions in millimeters
SC-75/SOT-416
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCC Supply voltage
VIN Input voltage
IO
IC(Max.)
DC Output current
PTOT
Total power dissipation
Tamb 25 OC, Note 1
TSTG
Storage temperature
TJ Junction temperature
RθJ-S
Thermal resistance
junction - soldering point
MIN.
-10
55
Note
1. Transistor mounted on an FR4 printed-circuit board.
MAX.
50
+40
30
100
150
+150
150
150
UNIT
V
V
mA
mW
OC
OC
OC/W
2003-12









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CHDTC144EEPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC ( CHDTC144EEPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
hFE
R1
R2/R1
fT
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
1.Pulse test: tp300uS; δ≤0.02.
CONDITIONS
IO=100uA; VCC=5.0V
IO=2mA; VO=0.3V
IO=10mA; II=0.5mA
VI=5V
VI=0V; VCC=50V
IO=5mA; VO=5.0V
IC=5mA, VCE=10.0V
f==100MHz
MIN.
0.5
68
32.9
0.8
TYP.
47
1.0
250
MAX.
3.0
0.3
0.18
0.5
61.1
1.2
UNIT
V
V
V
mA
uA
K
MHz









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CHDTC144EEPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC CURVES ( CHDTC144EEPT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
100
VO=0.3V
50
20
10 Ta =-40OC
5 102=05OOCC
2
1
500m
200m
100m
100 200 500 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
1k
VO=5V
500
Ta=100OC
200 25OC
100 -40OC
50
20
10
5
2
1
100 200 500 1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.2 Output current vs. input voltage
(OFF characteristics)
10m
5m VCC=5V
2m
1m
Ta=100OC
25OC
500 -40 OC
200
100
50
20
10
5
2
1
0 0.5 1.0 1.5 2.0 2.5 3.0
INPUT VOLTAGE : VI(off) (V)
Fig.4 Output voltage vs. output
current
1
lO/lI=20
500m
200m Ta=100OC
25OC
100m -40 OC
50m
20m
10m
5m
2m
1m
100 200 500 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)










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Номер в каталогеОписаниеПроизводители
CHDTC144EEPTNPN Digital Silicon TransistorChenmko Enterprise
Chenmko Enterprise

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