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PDF AP9469GM Data sheet ( Hoja de datos )

Número de pieza AP9469GM
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP9469GM Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP9469GM
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
Description
D
D
D
D
SO-8
G
S
S
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
G
40V
50mΩ
5.5A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
40
±20
5.5
4.4
20
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
50
Unit
/W
Data and specifications subject to change without notice
200527051-1/4

1 page





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