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AP9467GS PDF даташит

Спецификация AP9467GS изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP9467GS
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP9467GS Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP9467GS
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Fast Switching Characteristics
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
40V
11mΩ
52A
G D S TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100
IDM
PD@TC=25
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
52
33
200
44.6
0.36
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.8
40
62
Units
V
V
A
A
A
W
W/
Unit
/W
/W
/W
Data and specifications subject to change without notice
1
200810072









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AP9467GS Даташит, Описание, Даташиты
AP9467GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS=4.5V, ID=20A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=30A
Drain-Source Leakage Current
VDS=40V, VGS=0V
Drain-Source Leakage Current (Tj=150oC) VDS=32V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= +20V
ID=30A
Gate-Source Charge
VDS=32V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=20V
Rise Time
ID=30A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=0.67Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
40 -
-V
- - 11 m
- - 20 m
1 - 3V
- 35 - S
- - 1 uA
- - 25 uA
- - +100 nA
- 11 29 nC
- 3 - nC
- 7 - nC
- 8 - ns
- 69 - ns
- 20 - ns
- 6 - ns
- 970 1660 pF
- 185 - pF
- 110 - pF
- 1.8 3
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 27 - ns
- 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP9467GS Даташит, Описание, Даташиты
180
T C =25 o C
150
120
90
60
10V
7.0V
.
5.0V
4.5V
30
V G =3.0V
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 1. Typical Output Characteristics
16
I D =30A
T C =25 o C
14
12
10
8
6
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
25
20
15
T j =150 o C
T j =25 o C
10
5
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
80
T C =150 o C
60
AP9467GS
10V
7.0V
5.0V
4.5V
40
20
V G =3.0V
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.2
I D =30A
V G =10V
1.8
1.4
1.0
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3










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