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PDF AP02N90J-HF Data sheet ( Hoja de datos )
| Número de pieza | AP02N90J-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP02N90H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
D
▼ RoHS Compliant & Halogen-Free
G
Description
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP02N90J) is available for low-profile
applications.
BVDSS
RDS(ON)
ID
900V
7.2Ω
1.9A
G DS
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation4
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
900
+30
1.9
1.2
6
62.5
0.5
2
18
1.9
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2
62.5
110
Data & specifications subject to change without notice
Units
V
V
A
A
A
W
W/℃
W
mJ
A
℃
℃
Units
℃/W
℃/W
℃/W
1
201008115
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP02N90J-HF.PDF ] | |
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