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AP02N90I-HF-3 PDF даташит

Спецификация AP02N90I-HF-3 изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP02N90I-HF-3
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP02N90I-HF-3 Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP02N90I-HF-3
N-channel Enhancement-mode Power MOSFET
Fully isolated package
Simple Drive Requirement
Fast Switching Performance
RoHS-compliant, halogen-free
G
D
S
BV DSS
RDS(ON)
ID
900V
7.2
1.9A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP02N90I-HF-3 is in the TO-220CFM isolated through-hole package
which is widely used in commercial and industrial applications where a
small PCB footprint or an attached isolated heatsink is required.
This device is well suited for use in high voltage applications such as
off-line AC/DC converters.
G
D S TO-220CFM (I)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
900
±30
1.9
1.2
6
34.7
36
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.6
62
Units
°C/W
°C/W
Ordering Information
AP02N90I-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcs/tube)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200604182-3 1/5









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AP02N90I-HF-3 Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP02N90I-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
BV DSS/T j
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=0.85A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=1.9A
VDS=900V, VGS=0V
VDS=720V, VGS=0V
VGS=±30V
ID=1.9A
VDS=540V
VGS=10V
VDD=450V
ID=1.9A
RG=10, VGS=10V
RD=236
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.9A, VGS=0V
IS=1.9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
900 - - V
- 0.8 - V/°C
- - 7.2
2 - 4V
-2-S
- - 10 uA
- - 100 uA
- - ±100 nA
- 12 20 nC
- 2.5 - nC
- 4.7 - nC
- 10 - ns
-5
- ns
- 18 - ns
- 9 - ns
- 630 1000 pF
- 40 - pF
- 4 - pF
Min. Typ. Max. Units
- - 1.3 V
- 360 - ns
- 1.8 - µC
Notes:
1.Pulse width limited by safe operating area
2.Starting Tj=25oC , VDD=50V , L=20mH , RG=25, IAS=1.9A
3.Pulse width <300us, duty cycle < 2%
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5









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AP02N90I-HF-3 Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
Typical Electrical Characteristics
2.0
T C =25 o C
1.6
10V
8.0V
6.0V
5.0V
1.2
0.8
V G =4.5V
0.4
0.0
0 3 6 9 12 15 18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
-50 0 50 100
Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS
vs. Junction Temperature
2.0
1.5
T j =150 o C
1.0
T j =25 o C
0.5
0.0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP02N90I-HF-3
1.25
T C =150 o C
1.00
0.75
10V
8.0V
6.0V
5.0V
V G =4.5V
0.50
0.25
0.00
0
3 6 9 12 15
V DS , Drain-to-Source Voltage (V)
18
Fig 2. Typical Output Characteristics
2.8
2.4
I D = 0.85 A
V G =10V
2.0
1.6
1.2
0.8
0.4
0.0
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.6
1.2
0.8
0.4
-50 0 50 100
T j ,Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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Номер в каталогеОписаниеПроизводители
AP02N90I-HF-3N-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics

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