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AP01N60H-HF PDF даташит

Спецификация AP01N60H-HF изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP01N60H-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP01N60H-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristics
Simple Drive Requirement
RoHS Compliant & Halogen-Free
AP01N60H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
600V
RDS(ON)
8Ω
G ID 1.6A
S
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01N60J) is available for low-profile
applications.
G D S TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+30
1.6
1
6
39
0.31
13
1.6
0.5
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
3.2
62.5
110
Data & specifications subject to change without notice
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Units
/W
/W
/W
1
201108243
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AP01N60H-HF Даташит, Описание, Даташиты
AP01N60H/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance3 VGS=10V, ID=0.8A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=50V, ID=0.8A
Drain-Source Leakage Current
VDS=600V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS=+30V, VDS=0V
ID=1.6A
Gate-Source Charge
VDS=480V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=300V
Rise Time
ID=1.6A
Turn-off Delay Time
RG=10,VGS=10V
Fall Time
RD=187.5
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
600 - - V
- - 8Ω
2 - 4V
- 0.8 -
S
- - 10 uA
- - 100 uA
- - +100 nA
- 7.7 - nC
- 1.5 - nC
- 2.6 - nC
- 8 - ns
- 5 - ns
- 14 - ns
- 7 - ns
- 286 - pF
- 25 - pF
- 5 - pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Tj=25, IS=1.6A, VGS=0V
Min. Typ. Max. Units
- - 1.6 A
- - 6A
- - 1.5 V
Notes:
1.Pulse width limited by max. junction.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25, IAS=1.6A.
3.Pulse test
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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AP01N60H-HF Даташит, Описание, Даташиты
1.5
T C =25 o C
1
10V
6.0V
5.5V
5.0V
0.5
V G = 4.5 V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
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AP01N60H/J-HF
0.8
T C =150 o C
0.6
0.4
0.2
10V
6.0V
5.5V
5.0V
V G = 4.5 V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.8A
V G =10V
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3










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