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AP9563GJ PDF даташит

Спецификация AP9563GJ изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «P-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP9563GJ
Описание P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP9563GJ Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP9563GH/J
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
Simple Drive Requirement
Fast Switching Characteristic
Description
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9563GJ) is available for low-profile applications.
BVDSS
RDS(ON)
ID
-40V
40mΩ
-26A
GD
S TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
-40
±25
-26
-16
-64
44.6
0.36
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
2.8
110
Units
/W
/W
Data and specifications subject to change without notice
200227041









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AP9563GJ Даташит, Описание, Даташиты
AP9563GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-16A
VGS=-4.5V, ID=-12A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-10V, ID=-12A
VDS=-40V, VGS=0V
VDS=-32V, VGS=0V
VGS= ±25V
ID=-12A
VDS=-32V
VGS=-4.5V
VDS=-20V
ID=-12A
RG=3.3Ω,VGS=-10V
RD=1.6Ω
VGS=0V
VDS=-25V
f=1.0MHz
-40 - - V
- -0.03 - V/
- - 40 mΩ
- - 60 mΩ
-1 - -3 V
- 18 -
S
- - -1 uA
- - -25 uA
- - ±100 nA
- 19 30 nC
- 4 - nC
- 9 - nC
- 10 - ns
- 37 - ns
- 52 - ns
- 80 - ns
- 1460 2340 pF
- 230 - pF
- 180 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-12A, VGS=0V
IS=-12A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 40 - ns
- 54 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.









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AP9563GJ Даташит, Описание, Даташиты
100
T A = 25 o C
80
-10V
-7.0V
60
-5.0V
40 -4.5V
20 V G = -3.0 V
0
0 2 4 6 8 10 12 14
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
46
I D = -12 A
T C =25
42
38
34
30
3 5 7 9 11
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
5
4
3 T j =150 o C
2
T j =25 o C
1
0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP9563GH/J
90
80 T A = 1 5 0 o C
70
-10V
-7.0V
60
50 -5.0V
40
-4.5V
30
20
V G = -3.0 V
10
0
0 2 4 6 8 10 12 14
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
1.6 I D =-16A
V G =-10V
1.4
1.2
1.0
0.8
0.6
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
2
1.5
1
0.5
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature










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