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PDF AP9410GMT-HF Data sheet ( Hoja de datos )

Número de pieza AP9410GMT-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP9410GMT-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP9410GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Capable of 2.5V Gate Drive
D
Simple Drive Requirement
SO-8 Compatible
G
Low On-resistance
RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink.
BVDSS
RDS(ON)
ID
30V
5.5mΩ
80A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip), VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+12
80
23.6
19
300
56.8
5
28.8
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Value
2.2
25
Units
V
V
A
A
A
A
W
W
mJ
Units
/W
/W
Data & specifications subject to change without notice
1
201003031

1 page





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