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AP9410GH-HF PDF даташит

Спецификация AP9410GH-HF изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP9410GH-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP9410GH-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP9410GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
D
Simple Drive Requirement
Fast Switching Characteristic
G
RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching,
resistance and cost-effectiveness.
ruggedized
device
design,
low
on-
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as C/DC converters.
BVDSS
RDS(ON)
ID
30V
6mΩ
75A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V4
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
PD@TC=25
PD@TA=25
TSTG
TJ
Total Power Dissipation
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+12
75
61
300
89.2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data & specifications subject to change without notice
Value
1.4
62.5
Units
/W
/W
1
201202153









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AP9410GH-HF Даташит, Описание, Даташиты
AP9410GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=4.5V, ID=20A
VGS=2.5V, ID=10A
VDS=VGS, ID=250uA
VDS=4V, ID=20A
VDS=30V, VGS=0V
VGS=+12V, VDS=0V
ID=20A
VDS=24V
VGS=4.5V
VDS=15V
ID=20A
RG=1.8Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- - 6 m
- - 8 m
0.5 - 1.5 V
- 70 -
S
- - 10 uA
- - +100 nA
- 57 90 nC
- 8 - nC
- 24 - nC
- 12 - ns
- 52 - ns
- 57 - ns
- 10 - ns
- 5400 8640 pF
- 620 - pF
- 365 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 39 - ns
- 42 - nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
4.Package limitation current is 75A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP9410GH-HF Даташит, Описание, Даташиты
240
T C =25 o C
200
160
120
5.0V
4.5V
3.5V
V G = 2.5V
80
40
0
0.0 2.0 4.0 6.0 8.0 10.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
11
I D =10A
T C =25 o C
9
7
5
3
0 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T j =150 o C
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP9410GH-HF
120
T C =150 o C
5.0V
4.5V
100
3.5V
V G =2.5V
80
60
40
20
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =20A
V G =4.5V
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3










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Номер в каталогеОписаниеПроизводители
AP9410GH-HFN-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics

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