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AP9120GJ-HF PDF даташит

Спецификация AP9120GJ-HF изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «P-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP9120GJ-HF
Описание P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP9120GJ-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP9120GH/J-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
Description
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9120GJ) is
available for low-profile applications.
BVDSS
RDS(ON)
ID
-200V
680mΩ
-8A
G
D S TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
-200
+20
-8
-5
30
96
0.77
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.3
62.5
110
Units
/W
/W
/W
1
201005242









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AP9120GJ-HF Даташит, Описание, Даташиты
AP9120GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-5A
Drain-Source Leakage Current
VDS=-200V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=-160V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= +20V, VDS=0V
ID=-5A
Gate-Source Charge
VDS=-160V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-10V
VDS=-100V
Rise Time
ID=-5A
Turn-off Delay Time
RG=10Ω
Fall Time
VGS=-10V
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
-200 - - V
- - 680 mΩ
-2 - -4 V
-7-S
- - -25 uA
- - -250 uA
- - +100 nA
- 35 56 nC
- 6 - nC
- 15 - nC
- 13.5 - ns
- 16 - ns
- 52 - ns
- 25 - ns
- 1210 - pF
- 170 - pF
- 45 - pF
- 3.6 5.4 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-5A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 200 - ns
- 2 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP9120GJ-HF Даташит, Описание, Даташиты
20
T C =25 o C
16
12
-10V
-8.0V
-7.0V
-6.0V
8
V G = - 5.0V
4
0
0 4 8 12 16 20 24
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
700
I D = -4 A
T C =25
660
620
580
540
500
4 5 6 7 8 9 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
T j =150 o C
2
T j =25 o C
1
0
0 0.2 0.4 0.6 0.8 1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP9120GH/J-HF
12
TC=150oC
10
8
-10V
-8.0V
-7.0V
-6.0V
6 V G = -5.0V
4
2
0
0 4 8 12 16 20
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =- 4 A
V G =-10V
1.9
1.4
0.9
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.1
0.7
0.3
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3










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