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PDF AP0803GMP-HF Data sheet ( Hoja de datos )
| Número de pieza | AP0803GMP-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP0803GMP-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The EFSOP-8 (Exposed pad SO-8) package is widely preferred for
commercial-industrial surface mount applications and exposed
backside design is compatible with PMPAK® 5x6.
BVDSS
RDS(ON)
ID
30V
9.5mΩ
44A
D
D
D
D
D
EFSOP-8
G
S
S
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
44
18.2
14.6
160
29.7
5
16.2
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Value
4.2
25
Units
V
V
A
A
A
A
W
W
mJ
℃
℃
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201103281
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP0803GMP-HF.PDF ] | |
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