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AP08N60I-HF PDF даташит

Спецификация AP08N60I-HF изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP08N60I-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP08N60I-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP08N60I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
Description
D
S
BVDSS
RDS(ON)
ID
600V
0.85Ω
8A
AP08N60 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination
of fast switching,ruggedized design and cost-effectiveness.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+30
8
4.3
32
37
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.4
65
Units
/W
/W
1
201001281









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AP08N60I-HF Даташит, Описание, Даташиты
AP08N60I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=4A
VDS=VGS, ID=250uA
VDS=10V, ID=4A
VDS=480V, VGS=0V
VGS=+30V, VDS=0V
ID=4A
VDS=480V
VGS=10V
VDD=300V
ID=4A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=30V
f=1.0MHz
f=1.0MHz
600 - - V
- - 0.85 Ω
2 - 4V
- 9.4 -
S
- - 25 uA
- - +100 nA
- 67 107.2 nC
- 9 - nC
- 26 - nC
- 13 - ns
- 8 - ns
- 62 - ns
- 14 - ns
- 2420 3870 pF
- 150 - pF
- 12 - pF
- 2.3 - Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=4A, VGS=0V
IS=4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 430 - ns
- 6.1 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP08N60I-HF Даташит, Описание, Даташиты
14
T C =25 o C
12
10
10V
6.0V
8
6
5.0V
4
2 V G =4.0V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
25
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP08N60I-HF
8
T C =150 o C
6
4
10V
5.0V
4.5V
2 V G =4.0V
0
0 5 10 15 20 25
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =4A
V G =10V
2
1
4.3
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
150
1.2
1
0.8
0.6
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3










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Номер в каталогеОписаниеПроизводители
AP08N60I-HFN-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics

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