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AP08P20GP-HF PDF даташит

Спецификация AP08P20GP-HF изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «P-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP08P20GP-HF
Описание P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP08P20GP-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP08P20GS/P-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
D
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
GD S
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP08P20GP) are
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
-200
+20
-8
-5
30
96
0.77
-55 to 150
-55 to 150
-200V
680mΩ
-8A
TO-263(S)
TO-220(P)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.3
40
62
Units
/W
/W
/W
1
201108052









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AP08P20GP-HF Даташит, Описание, Даташиты
AP08P20GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-5A
Drain-Source Leakage Current
VDS=-200V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=-160V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V, VDS=0V
ID=-5A
Gate-Source Charge
VDS=-160V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-100V
Rise Time
ID=-5A
Turn-off Delay Time
RG=10Ω,VGS=-10V
Fall Time
RD=20Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
-200 - - V
- -0.03 - V/
- - 680 mΩ
-2 - -4 V
-4-S
- - -25 uA
- - -250 uA
- - +100 nA
- 20 32 nC
- 5 - nC
- 13 - nC
- 12 - ns
- 14 - ns
- 64 - ns
- 28 - ns
- 1210 - pF
- 170 - pF
- 45 - pF
- 3.6 5.4 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-5A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 165 - ns
- 1420 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2









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AP08P20GP-HF Даташит, Описание, Даташиты
15
T C =25 o C
12
-10V
-7.0V
9
-5.0V
6
-4.5V
3
V G = - 3 .0V
0
0 3 6 9 12 15 18
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1400
I D = -4 A
T C =25
1100
800
500
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
T j =150 o C
2
T j =25 o C
1
0
0 0.2 0.4 0.6 0.8 1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP08P20GS/P-HF
10
TC=150oC
8
6
4
-10V
-7.0V
-5.0V
-4.5V
2
V G = - 3 .0V
0
0 3 6 9 12 15 18
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =- 4 A
V G =-10V
1.9
1.4
0.9
0.4
-50 0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.1
0.7
0.3
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3










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Номер в каталогеОписаниеПроизводители
AP08P20GP-HFP-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics

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