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2CL3509 PDF даташит

Спецификация 2CL3509 изготовлена ​​​​«Tianjin zhonghuan semiconductor» и имеет функцию, называемую «High Voltage Silicon Diodes».

Детали детали

Номер произв 2CL3509
Описание High Voltage Silicon Diodes
Производители Tianjin zhonghuan semiconductor
логотип Tianjin zhonghuan semiconductor логотип 

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2CL3509 Даташит, Описание, Даташиты
High Voltage Silicon Diodes for Micro-wave oven
2CL3509 2CL3512
High voltage silicon diodes for
micro-wave oven
Features
z IFAV
350mA
z VRRM
9kV12kV
z High reliability
Primary characteristics
Type
2CL3509 2CL3512
IF(AV)
VRRM
IFSM
IRM
VFM
TJ max.
350mA
9kV 12kV
30A
5uA
9V 10V
130°C
Applications
Rectification for high voltage power supply of magnetron in
Micro wave oven and others
Mechanical data
z Case: Molded Plastic Body
z Epoxy meets UL 94V-0 flammability rating
z Terminals: Pure tin plated leads, solderable per J-STD-002
and JESD22-B102, E3 suffix for consumer grade, meet
JESD201 class 1A whisker test.
z Polarity: Color band denotes cathode end
Maximum rating (Ta=25oC unless otherwise noted)
Parameter
Symbol 2CL3509
2CL3512 Unit
Repetitive peak reverse voltage
Average forward current
60HZ half-sine wave, Resistance
load, Ta60°C
VRRM
IF(AV)
9 12
350
kV
mA
Forward surge current
Reverse surge current
Peak forward voltage
Peak reverse current
Avalanche breakdown
voltage
60HZ half-sine wave,
1cycle,Ta=25°C
WP=1ms, Rectangular-wave,
One-shot, Ta=25°C
IFM=350mA
VRM=VRRM
IR=100µA
IFSM
IRSM
VFM
IRRM1
VBR
30
100
9 10
5
9.5
12.5
A
mA
V
µA
kV
Virtual junction temperature
T(vj) 130 °C
Storage temperature
Tstg
-40 ~ +130
°C
Notes: Cooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm×50mm×0.6mm
Wind-cooled velocity is more than 0.5m/s
Rev. A1
Tianjin zhonghuan semiconductor co.,LTD
P1/3









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2CL3509 Даташит, Описание, Даташиты
Typical characteristics
400
Ta=25
300
200
100
High Voltage Silicon Diodes for Micro-wave oven
2CL3509 2CL3512
2CL3509
2CL3512
1
Ta=25
0.1
0.01
0.001
2CL3509
2CL3512
0 0.0001
0 3 6 9 12 15 18
0 3 6 9 12 15
VFM(V)
Figure 1. Forward characteristics
VRM (kV)
Figure 2.      Reverse characteristics
400
300
200
100
0
0 20 40 60 80 100 120 140
Ta (oC)
Figure 3. IF(AV)Ta Derating
Rev. A1
Tianjin zhonghuan semiconductor co.,LTD
P2/3









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2CL3509 Даташит, Описание, Даташиты
Safety Test
Safety Test
High Voltage Silicon Diodes for Micro-wave oven
2CL3509 2CL3512
3mm Wide metal film is rolled on the surface middle of diode body
1. Insulation Resistance Test: 500V DC voltage is added between A and B. The measurement by insulation resistance
meter is big than 1000M.
2. Resistance To Voltage Strength Test: 15kV half-sine wave voltage is added between A and B for one minute and no
breakdown or arc in insulation oil.
Package outline dimensions
Marking
Type
2CL3509
2CL3512
Dim.
A
B
C
D
Inches
Min.
0.866
Max.
0.846
0.886
0.276
0.315
0.046
0.048
Millimeters
Min.
22
Max.
21.5 22.5
7.0 8.0
1.17 1.23
Code
T3509
T3512
Cathode Mark
Rev. A1
Tianjin zhonghuan semiconductor co.,LTD
P3/3










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