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09N90E PDF даташит

Спецификация 09N90E изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «FMH09N90E».

Детали детали

Номер произв 09N90E
Описание FMH09N90E
Производители Fuji Electric
логотип Fuji Electric логотип 

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09N90E Даташит, Описание, Даташиты
FMH09N90E
Super FAP-E3 series
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.0±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Outline Drawings [mm]
TO-3P(Q)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
IDP
VGS
IAR
EAS
EAR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Characteristics
900
900
±9
±36
±30
9
565.3
20.5
2.1
100
2.5
205
150
-55 to + 150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS (th)
IDSS
IGSS
RDS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
QSW
IAV
VSD
trr
Qrr
Conditions
ID=250µA, VGS=0V
ID=250µA, VDS=VGS
VDS=900V, VGS=0V
VDS=720V, VGS=0V
VGS=±30V, VDS=0V
ID=4.5A, VGS=10V
ID=4.5A, VDS=25V
VDS=25V
VGS = 0V
f=1MHz
Vcc = 60 0V
VGS=10V
ID=4.5A
RG=24Ω
Vcc = 450V
ID=9A
VGS=10V
L=5.12mH, Tch=25°C
IF=9A, VGS=0V, Tch=25°C
IF=9A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Tch=25°C
Tch=125°C
min.
900
3.5
-
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
-
9
-
-
-
typ.
-
4.0
-
-
10
1.16
10
1700
150
11
35
30
110
30
50
15
16
6
-
0.90
1.8
15
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Test Conditions
Channel to case
Channel to ambient
min.
typ.
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=3.6A, L=80.0mH, Vcc=90V, RG=10Ω
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche current' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=2.1kV/µs, Vcc≤BVDSS, Tch≤150°C.
max.
-
4.5
25
250
100
1.4
-
2550
225
17
53
45
165
45
75
23
24
9
-
1.35
-
-
max.
0.610
50.0
Unit
V
V
µA
nA
S
pF
ns
nC
A
V
µS
µC
Unit
°C/W
°C/W
1









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09N90E Даташит, Описание, Даташиты
FMH09N90E
Allowable Power Dissipation
PD=f(Tc)
240
200
160
120
80
40
0
0 25 50 75 100
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 μs pulse test,Tch=25°C
15
125
150
10V
7.0V
6.5V
10
6.0V
5
VGS=5.5V
0
0 4 8 12 16 20
VDS [V]
Typical Transconductance
gfs=f(ID):80μs pulse test,VDS=25V,Tch=25°C
100
24
10
1
0.1
0.1
1
ID [A]
10
100
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25°C
102
101
100
t=
1μs
10μs
100μs
1ms
10-1
Power loss waveform :
Square waveform
PD
t
10-2
10-1
100 101
VDS [V]
102
Typical Transfer Characteristic
ID=f(VGS):80μs pulse test,VDS=25V,Tch=25°C
100
103
10
1
0.1
0123456789
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 μs pulse test,Tch=25°C
2.0
10
VGS=5.5V
1.8
6V
1.6 6.5V 7V
10V
20V
1.4
1.2
1.0
0.8
0
2
48
ID [A]
12









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09N90E Даташит, Описание, Даташиты
FMH09N90E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4.5A,VGS=10V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
max.
1.5
1.0 typ.
0.5
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=9A,Tch=25°C
14
12
Vcc= 120V
450V
720V
10
8
6
4
2
0
0 20 40 60 80 100
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 μs pulse test,Tch=25°C
100
10
1
0.1
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250μA
8
7
6
5 max.
typ.
4
min.
3
2
1
0
-50 -25 0
25 50 75
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
100 125 150
Ciss
103
102
Coss
101
Crss
100
10-2
10-1
100
VDS [V]
101
102
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=24Ω
103
tf
td(off)
102
td(on)
tr
101
0.01
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD [V]
3
100
10-1
100
ID [A]
101
102










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