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PDF PMDPB70XPE Data sheet ( Hoja de datos )
| Número de pieza | PMDPB70XPE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PMDPB70XPE
20 V dual P-channel Trench MOSFET
Rev. 1 — 20 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a
leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
2 kV ElectroStatic Discharge (ESD)
protection
1.3 Applications
Relay driver
High-speed line driver
High-side load switch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics (per transistor)
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
RDSon
drain-source on-state VGS = -4.5 V; ID = -2 A; Tj = 25 °C
resistance
Min Typ Max Unit
--
-12 -
[1] -
-
-20 V
12 V
-4.2 A
- 66 79 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
1 page  
NXP Semiconductors
PMDPB70XPE
20 V dual P-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0.01
0.02
0
aaa-003792
1
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33 0.25
0.2 0.1
10 0.05
0.02
0 0.01
aaa-003793
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB70XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
PMDPB70XPE
20 V dual P-channel Trench MOSFET
2.1
0.65 0.65
0.49 0.49
0.875
2.25
0.875
0.3 0.4
(6×) (6×)
1.05 1.15
(2×) (2×)
0.35
(6×)
0.72
(2×)
0.45
(6×)
0.82
(2×)
Fig 19. Reflow soldering footprint for DFN2020-6 (SOT1118)
solder lands
solder paste
solder resist
occupied area
Dimensions in mm
sot1118_fr
PMDPB70XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
© NXP B.V. 2012. All rights reserved.
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