PMDPB65UP Datasheet PDF - NXP Semiconductors
| Part Number | PMDPB65UP | |
| Description | MOSFET ( Transistor ) | |
| Manufacturers | NXP Semiconductors | |
| Logo |  |
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There is a preview and PMDPB65UP download ( pdf file ) link at the bottom of this page. Total 15 Pages | ||
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PMDPB65UP
20 V, 3.5 A dual P-channel Trench MOSFET
Rev. 2 — 8 March 2011
Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small
and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Trench MOSFET technology
1.8 V RDSon rated for low voltage gate
drive
1 kV ElectroStatic Discharge (ESD)
protection
Small and leadless ultra thin SMD
plastic package: 2 × 2 × 0.65 mm
Exposed drain pad for excellent
thermal conduction
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Small brushless DC motor drive
Power management in battery-driven
portables
Hard disk and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Per transistor
VDS
drain-source
Tamb = 25 °C
voltage
VGS gate-source
voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon
drain-source
on-state
resistance
VGS = -4.5 V; ID = -1 A;
tp ≤ 300 µs; δ ≤ 0.01 ;
Tj = 25 °C
Min Typ Max Unit
--
-8 -
[1] -
-
-20 V
8V
-3.5 A
- 58 70 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMDPB65UP
20 V, 3.5 A dual P-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
10
0 0.02
0.01
017aaa067
1
10−3
10−2
FR4 PCB, standard footprint
10−1
1
10 102 103
tp (s)
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
10
0.02
0 0.01
017aaa068
1
10−3
10−2
10−1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB65UP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 March 2011
© NXP B.V. 2011. All rights reserved.
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for PMDPB65UP electronic component. |
| Information | Total 15 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ PMDPB65UP.PDF Datasheet ] | |
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